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APT1204R7BFLL APT1204R7SFLL
POWER MOS 7
(R)
1200V 3.5A 4.700
D3PAK
TO-247
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT1204R7B_SFLL UNIT Volts Amps
1200 3.5 14 30 40 135 1.08 -55 to 150 300 3.5 10
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 4.70 250 1000 100 3 5
(VGS = 10V, ID = 1.75A)
Ohms A nA Volts
7-2006 050-7390 Rev B
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT1204R7B_SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 3.5A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 3.5A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 800V, VGS = 15V ID = 3.5A, RG = 4.3 ID = 3.5A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
715 130 36 31 4 21 7 2 20 24 115 23 135 25
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
3.5 14 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -ID 3.5A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID 3.5A, di/dt = 100A/s) Reverse Recovery Charge (IS = -ID 3.5A, di/dt = 100A/s) Peak Recovery Current (IS = -ID 3.5A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 515 0.5 1.1 8.3 11.5
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.90 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
1.0
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.80
0.9
0.7 0.60 0.5 0.40 0.3 0.20 0.1 0 0.05 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
050-7390 Rev B
7-2006
Z
JC
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
8 7 6 5 4 3 2 1 0
APT1204R7 B_SFLL
VGS =15,10 & 8V 7V 6.5V
TJ ( C)
0.386 Dissipated Power (Watts) 0.00336 0.0903
TC ( C)
0.508
ZEXT
6V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V NORMALIZED TO = 10V @ 1.75A
10
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
GS
8
1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V
6 TJ = -55C TJ = +125C TJ = +25C
4
2
0
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
3.5 3 2.5 2 1.5 1 0.5 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1 2 3 4 5 6 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
= 1.75A = 10V
V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
050-7390 Rev B
7-2006
14 10
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
3,000 100S 1,000
APT1204R7 B_SFLL
Ciss
5
C, CAPACITANCE (pF)
500
1mS
100 50
Coss
1
Crss
0.5
TC =+25C TJ =+150C SINGLE PULSE
10mS
1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 3.5A
100 50
12
VDS=100V VDS=250V
8
VDS=400V
10
TJ =+150C TJ =+25C
4
10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 35 30
td(on) and td(off) (ns)
0
0
5
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 40
V
DD G
1
= 800V
td(off)
35 30
R
= 4.3
T = 125C
J
tf
25
V
L = 100H
20 15 10 5 0
R
G
= 4.3
T = 125C
J
tr and tf (ns)
DD
= 800V
25 20 15 10 5 tr
L = 100H
td(on)
0
3 4 5 6 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
1
2
3 4 5 6 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 200
0
0
1
2
180 160 140
Eon and Eoff (J)
Eon
SWITCHING ENERGY (J)
Eon 160
V I = 800V
120 100 80 60 40 20 0 0 1 2
V
DD G
120
DD
= 800V
D J
= 3.5A
T = 125C
R
= 4.3
T = 125C
J
80
L = 100H EON includes diode reverse recovery
7-2006
L = 100H E ON includes diode reverse recovery
40 Eoff 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0
050-7390 Rev B
Eoff
3 4 5 6 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
Typical Performance Curves
APT1204R7 B_SFLL
10%
Gate Voltage TJ125C
90%
Gate Voltage
td(on) tr
5% 90% 10% 5% Drain Voltage Switching Energy Drain Current
td(off) tf
Drain Voltage 90% 10% 0 Switching Energy Drain Current
TJ125C
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DQ120 APT60D120B
V CC
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7390 Rev B
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
7-2006
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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